Work

Enhanced RF/Analog Performances of Beyond 6nm tox of Dual Stack Gate Dielectric GaAs based FinFET

Year: 2024

Type: conference-paper

Source: International Conference on Communication, Control and Intelligent Systems (CCIS)

DOI: 10.1109/ccis63231.2024.10932022

Authors: Aprajita Kumari, Rajashree Das

Institution: National Institute of Technology Durgapur

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4408862282

FWCI: 2.418

Cites: 15

Cited by: 3

Related to: 10