Work

Design of a Gate-Diode LVTSCR with High Holding Voltage and Robustness

Year: 2024

Type: conference-paper

Source: International Conference on Electronic Information Engineering and Computer Communication (EIECC)

DOI: 10.1109/eiecc64539.2024.10929590

Authors: Haotian Chen, Jun Deng, Yang Wang, Fengfeng Zhou, Hongjiao Yang, Beibei Nie

Institution: Xiangtan University

Language: English

Topic: Electrostatic Discharge in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4408866547

FWCI: 0.806

Cites: 8

Cited by: 1

Related to: 10