Work

Boosting photovoltaic efficiency in 2D cesium lead bromide perovskies via SnI 2 interlayer substitutional doping

Year: 2025

Type: article

Abstract: In the field of optoelectronics, two-dimensional cesium lead bromide perovskites have emerged as a focal point of research, yet their application in photovoltaics is limited by a substantial bandgap and charge carrier confinement. To address this, our study introduces SnI 2 as a substitutional dopant within a monolayer of Cs 4 Pb 3 Br 10 , yielding the novel composition Cs 4 Pb 2 SnI 2 Br 8 . This doped monolayer exhibits a direct bandgap reduced from 1.97 eV to 0.27 eV, extending the optical absorption spectrum. Using time-dependent density functional theory (TDDFT), we probed the electronic dynamics under ultrafast laser excitation, revealing enhanced photoresponse characteristics. The SnI 2 interlayer fosters carrier delocalization, amplifying the induced photocurrent, particularly under a 653 nm femtosecond laser with intensity from 1.327 × 10 12 to 1.327 × 10 13 W/cm 2 . Notably, the SnI 2 layers exhibit an intense long-range oscillating current peaking at ∼200 µA in the 4133 nm infrared regime. These unique optical response properties stem from interlayer excitons in the doped monolayer. This work outlines a strategic approach to enhance the photovoltaic efficacy of 2D cesium lead bromide perovskites and provides significant insights for designing advanced optoelectronic materials.

Source: Optics Express

DOI: 10.1364/oe.558818

Authors: Yi-Han Cheng, Bofeng Zhang, Jiahe Lin

Institutions: Peking University, Xiamen University

Language: English

Topic: Perovskite Materials and Applications

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: gold

Estimated APC paid: $2,270