A 0.81–1.46 ppm/∘C High-Order Segmented Curvature-Compensation Bandgap Reference with Dynamic Element Matching Offset Cancellation for a Battery Management System
Year: 2025
Type: article
Abstract: A precise high-order segmented curvature-compensation bandgap reference (BGR) with dynamic element matching (DEM) offset cancellation has been developed. The proposed segmented curvature-compensation scheme with a resistive trimming network is used to reduce the errors caused by the nonlinear dependence of the bipolar transistor base-emitter voltage (VBE) on temperature. To decrease the std dev (σ) of the reference voltage (VREF), DEM technology is applied in the core BGR to alleviate the current branch mismatch, as well as the current mirror mismatch in the error amplifier. The proposed BGR circuit is designed on a 0.18 μm BCD process with an active area of 300×375μm and 61.5 μA@5 V current consumption in the bandgap core circuit. The post-simulation results show that the proposed BGR achieves a temperature coefficient (TC) of 0.81–1.46 ppm/°C from −40 °C to 125 °C and a 0.045% σ/μ variation on a 3.2768 V VREF.
Source: Electronics
Authors: Jingkai Xu, Wei Wang, Yude Lin, Harikrishnan Ramiah, Xiaochao Li
Institutions: Xiamen University, University of Malaya
Language: English
Subfield: Biomedical Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,896
OpenAlex ID: W4408893272