Work

Variability induced by random discrete dopants in source and drain extensions of gate-all-around nanosheet FETs: a quantum transport simulation study

Year: 2025

Type: article

Source: Nanotechnology

DOI: 10.1088/1361-6528/adc606

Authors: Jaehyun Lee, Tapas Dutta, Vihar P Georgiev, Asen Asenov

Institutions: Pusan National University, University of Glasgow

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Pusan National University

OpenAlex ID: W4408902613

FWCI: 0.462

Cites: 34

Cited by: 2

Related to: 10