Work

Layer-by-layer NH3 plasma treatment for area-selective atomic layer deposition of high-quality SiO2 thin films

Year: 2025

Type: article

Source: The Journal of Chemical Physics

DOI: 10.1063/5.0257779

Authors: Sanghun Lee, Seunggi Seo, Tae Hyun Kim, Hwi Yoon, Seonyeong Park, Seunggyu Na, Jeongwoo Seo, Soo-Hyun Kim, Seung-min Chung, Hyungjun Kim

Institutions: Hoseo University, Yonsei University, Ulsan National Institute of Science and Technology

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Trade, Industry and Energy, Ministry of Science and ICT, South Korea

Awards: G1073333860, G3133686546, G8092486624

OpenAlex ID: W4408920429

FWCI: 0.911

Cites: 51

Cited by: 4

Related to: 10