Work

Preparation of NiO NWs by Thermal Oxidation for Highly Selective Gas-Sensing Applications

Year: 2025
Type: article
Abstract: This paper presents a novel approach for fabricating porous NiO films decorated with nanowires, achieved through sputtering followed by thermal oxidation of a metallic layer. Notably, we successfully fabricate NiO nanowires using this simple and cost-effective method, demonstrating its potential applicability in the gas-sensing field. Furthermore, by using the film of our nanowires, we are able to easily prepare NiO sensors and deposit the required Pt electrodes directly on the film. This is a key advantage, as it simplifies the fabrication process and makes it easier to integrate the sensors into practical gas-sensing devices without the need for nanostructure transfer or intricate setups. Scanning electron microscopy (SEM) reveals the porous structure and nanowire formation, while X-ray diffraction (XRD) confirms the presence of the NiO phase. As a preliminary investigation, the gas-sensing properties of NiO films with varying thicknesses were evaluated at different operating temperatures. The results indicate that thinner layers exhibit superior performances. Gas measurements confirm the p-type nature of the NiO samples, with sensors showing high responsiveness and selectivity toward NO2 at an optimal temperature of 200 °C. However, incomplete recovery is observed due to the high binding energy of NO2 molecules. At higher temperatures, sufficient activation energy enables a full sensor recovery but with reduced response. The paper discusses the adsorption–desorption reaction mechanisms on the NiO surface, examines how moisture impacts the enhanced responsiveness of Pt-NiO (2700%) and Au-NiO (400%) sensors, and highlights the successful fabrication of NiO nanowires through a simple and cost-effective method, presenting a promising alternative to more complex approaches.
Source: Sensors
Language: English
Open Access status: gold
Estimated APC paid: $3,137
OpenAlex ID: W4408947265
FWCI: 2.072
Cites: 70
Cited by: 9
Related to: 10