Work

Extraction of Trapping Voltage and Rate Over an Extended Bias Range for GaN and GaAs HEMTs

Year: 2025

Type: conference-paper

Source: Australian Microwave Symposium (AMS)

DOI: 10.1109/ams63679.2025.10937803

Authors: J. G. Rathmell, A. E. Parker, M. C. Gorman, S. J. Mahon

Institution: Macquarie University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4408954763

FWCI:

Cites: 5

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Related to: 10