Work

Trench-Gate Bipolar Transistor With Partially Buried Carrier Storage Layer for Enhanced Blocking and Switching Characteristics

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3552365

Authors: Changhao Wang, Jianbin Guo, Jingjing Tan, Qingqing Sun, David Wei Zhang, Hao Zhu

Institution: Fudan University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G6330520825, G8499616636

OpenAlex ID: W4408971094

FWCI: 0.462

Cites: 19

Cited by: 2

Related to: 10