Work

Annealing Of Irradiation Defects In Si3n4: Tem Examination

Year: 2025

Type: article

Abstract: The article presents the first results of the study of structural and morphological features of swift (220 MeV) xenon ion induced defects in polycrystalline Si3N4 during post-irradiation heat treatment. The approximate temperature range of ion track region recrystallization is defined as 300 - 800 °C, at 800 °C complete structural relaxation was observed in the in-situ and ex-situ modes. It was found that the track recovery process, as expected, depends on the grain size and thickness of the sample. For complete recrystallization in both studied modes, a short annealing time was required due to the nature of the initial defects (before heating).

Source: Eurasian journal of physics and functional materials

DOI: 10.69912/2616-8537.1237

Authors: A. Ibrayeva, J. O’Connell, A Janse van Vuuren, V. Skuratov

Institutions: Institute of Nuclear Physics, Joint Institute for Nuclear Research

Language: English

Topic: Nuclear materials and radiation effects

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: diamond

OpenAlex ID: W4408976534

FWCI: 0.212

Cites:

Cited by: 1

Related to: 10