Technology CAD Modeling of GaN High‐Electron‐Mobility Transistors with Superlattice Buffer Based on Mechanism of Back‐Gate Characteristics
Year: 2025
Type: article
Source: physica status solidi (a)
Authors: Kosuke Miura, Takeshi Suwa, Ryohei Nega, Takao Noda
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4408981605