Research and Analysis of Gallium Nitride (GaN) Materials in the Diode Application
Year: 2025
Type: article
Abstract: Gallium Nitride (GaN) material is an important third-generation semiconductor material, with many excellent physical and chemical characteristics, such as high forbidden band width, high electron mobility, high saturation drift speed, high temperature resistance, high pressure resistance, good thermal conductivity, etc. These features make GaN show a wide range of applications in many fields. This paper details the physical and chemical properties of semiconductor material gallium nitride (GaN), synthetic methods, and application in diode, which can make it have lower conduction resistance and higher voltage resistance, and puts forward the prospect for its future development trend and application prospect.
Author: Liwen Zheng
Institution: Qingdao University of Science and Technology
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W4408990600