Dual-Layer Anomalous Hall Effect Sensor for Enhanced Accuracy and Range in Magnetic Field Detection
Year: 2025
Type: article
Abstract: This study introduces a method aimed at enhancing both the accuracy and the range of magnetic field sensors, which are two critical parameters, in a novel NiCo2O4-based anomalous Hall effect sensor. To fine-tune the linear range of the sensor, we introduced epitaxial strain using a MgAl2O4 cover layer, which significantly influenced the strain-modulated magnetic anisotropy. A NiCo2O4/MgAl2O4/NiCo2O4/MgAl2O4 heterostructure was further constructed, achieving differentiation in the material characteristics across both upper and lower NiCo2O4 layers through the modulation of thickness and strain. A dual-layer Hall bar was designed to enhance the integration of the sensor, offering varied detection ranges. This approach enabled the realization of ultrahigh sensitivity, measuring 10,000 V/(AT) within a ±0.1 mT range, and a competitive sensitivity of 60 V/(AT) within a ±5 mT range. By reducing the thickness of the top NiCo2O4 layer, an ultra-wide measurement range of ±1000 mT was also achieved. These results highlight the considerable promise of NiCo2O4-based anomalous Hall effect devices as compact, multi-range tools in the domain of magnetic sensing technology.
Source: Nanomaterials
DOI: 10.3390/nano15070527
Authors: Sitong An, Lvkang Shen, Tianyu Liu, Yan Wang, Qiuyang Han, Ming Liu
Institution: Xi'an Jiaotong University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,896
OpenAlex ID: W4409009428
