Work

Improved Hysteresis of High-Performance p-Type WSe2 Transistors with Native Oxide WOx Interfacial Layer

Year: 2025

Type: article

Source: Nano Letters

DOI: 10.1021/acs.nanolett.4c06060

Authors: Hao-Yu Lan, Yuanqiu Tan, Shao-Heng Yang, Xiangkai Liu, Zhongxia Shang, Joerg Appenzeller, Zhihong Chen

Institution: Purdue University West Lafayette

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Semiconductor Research Corporation, Intel Corporation

Award: G6839413216

OpenAlex ID: W4409009935

FWCI: 2.701

Cites: 64

Cited by: 13

Related to: 10