Work

Thermal Atomic Layer Etching of Zinc Oxide from 30–300 °C Using Sequential Exposures of Hydrogen Fluoride and Trimethylgallium

Year: 2025

Type: article

Source: Chemistry of Materials

DOI: 10.1021/acs.chemmater.5c00028

Authors: Taewook Nam, David R. Zywotko, Troy A. Colleran, Jonathan L. Partridge, Steven M. George

Institution: Sejong University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Semiconductor Research Corporation, Lam Research, Tokyo Electron, Sejong University

OpenAlex ID: W4409013223

FWCI: 0.684

Cites: 43

Cited by: 3

Related to: 10