Gas Sensor for Ammonia and Nitrogen Oxides Made of ALD-Grown MoS2
Year: 2025
Type: article
Abstract: Since the discovery of graphene, 2D materials are in the focus of research for new applications. With the advantages of light weight and flexibility, 2D materials, especially the famous group of transition metal dichalcogenides pave the way toward a new generation of sensing devices. A most practical fashion to realize such 2D material-based sensing devices is their implementation in transistor setups that allow photocurrent detection or chemically resistive sensing. Until now, gas sensing devices based on MoS2are still in research but not used commercially. This work presents two versions of a process for fabricating sensor elements with MoS2films as a sensitive layer. The use of a low-temperature atomic layer deposition process as deposition technology for MoS2thin films allows the fabrication of sensor elements that can easily be integrated in industrial scale. Furthermore, the developed devices are investigated regarding their performance to NO2and NH3at room temperature.
Source: IEEE Sensors Letters
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $2,645
OpenAlex ID: W4409014192