Work

State Dependent Threshold Voltage Shift in Irradiated 64-Layer 3-D NAND Memories

Year: 2025

Type: article

Source: IEEE Transactions on Nuclear Science

DOI: 10.1109/tns.2025.3556805

Authors: Mondol Anik Kumar, Indranil Chatterjee, Timothy Boykin, Biswajit Ray

Institutions: Colorado State University, Airbus Defence and Space GmbH (Germany), University of Alabama in Huntsville

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: BioXFEL Science and Technology Center

Award: G704549845

OpenAlex ID: W4409058106

FWCI: 1.133

Cites: 39

Cited by: 5

Related to: 10