Work

GaN-Based Laser Diode with a Trapezoidal EBL and an Unintentionally Doped Layer Reaching 7.8 GHz Modulation Bandwidth

Year: 2025

Type: article

Source: ACS Photonics

DOI: 10.1021/acsphotonics.4c02606

Authors: Haolin Jia, Junhui Hu, Zhenqian Gu, Zhen Yang, Dehuai Fan, Lulu Zha, Jiabin Wu, Chenyu Guo, Yingjun Zhou, Jianyang Shi, Ziwei Li, Junwen Zhang, Nan Chi, Chao Shen

Institution: Fudan University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Jiangsu Provincial Key Research and Development Program, Shanghai Rising-Star Program

Awards: G2241890471, G2915870367, G3128256747, G5776499988

OpenAlex ID: W4409059181

FWCI: 1.86

Cites: 37

Cited by: 6

Related to: 10