Work

A Novel Ultraviolet Photodetector With High Responsivity and Low Operating Voltage Based on Hybrid Si/SiC Technology

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3551721

Authors: W. Zhang, Y. X. Chen, J. Y. Yang, S. Y. Feng, B. Li, WE. Lu, F. Y. Liu, J. Wan

Institutions: Fudan University, Chinese Academy of Sciences, Institute of Microelectronics

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Natural Science Foundation of Shanghai, National Natural Science Foundation of China, Key Laboratory of Silicon Device Technology, National Key Research and Development Program of China

Awards: G5802249786, G6184443516, G674450854, 基于硅/二维材料的异质多维光电探测器研究

OpenAlex ID: W4409077179

FWCI: 1.366

Cites: 31

Cited by: 6

Related to: 10