Work

An Analytical Charge-Based Drain Current Model for Normally-off p-GaN/AlGaN/GaN HEMTs

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3552360

Authors: Nadim Ahmed, Azwar Abdulsalam, Sudhiranjan Tripathy, Gourab Dutta

Institutions: Indian Institute of Technology Kharagpur, Purdue University West Lafayette, Agency for Science, Technology and Research, Institute of Materials Research and Engineering

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Department of Science and Technology, Government of Kerala

Award: G1137816970

OpenAlex ID: W4409077194

FWCI: 3.554

Cites: 31

Cited by: 11

Related to: 10