C4F6 Etching Characteristics for High‐Aspect‐Ratio Etching of SiO2 Films Using an Inductively Coupled Plasma Etching System With Low‐Frequency Bias Power
Year: 2025
Type: article
Abstract: ABSTRACT In this study, the etching characteristics of C4F6 gas are investigated using inductively coupled plasma (ICP) etching equipment to apply a high‐aspect‐ratio etching process to SiO2. The use of a CF4 + C4F6 + He gas mixture in the ICP etching system provides a lower F atom density, a higher polymerization capacity with increasing C4F6 gas proportion, and better SiO2/amorphous carbon layer selectivity. With an increase in the C4F6 gas mixing ratio, the bowing phenomenon is alleviated, and a vertically etched profile is formed regardless of the source and bias power. The etching characteristics demonstrate that ICP etching using C4F6 gas is an excellent alternative to capacitively coupled plasma (CCP) etching for the development of next‐generation high‐aspect‐ratio‐contact etching processes.
Source: Plasma Processes and Polymers
DOI: 10.1002/ppap.70012
Authors: Jiachen Wei, Byungjun Woo, DaeKug Lee, Ki‐Hyeok Jeong, Kwang‐Ho Kwon
Institution: Korea University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W4409080282