Work

1.96 kV p-Cr2O3/ β -Ga2O3 heterojunction diodes with an ideality factor of 1.07

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0248187

Authors: Chunxu Su, Hong Zhou, Zheyuan Hu, Chenlu Wang, Yue Hao, Jincheng Zhang

Institutions: Xidian University, Guangzhou Institute of Technology, Chinese Academy of Sciences, Suzhou Institute of Nano-tech and Nano-bionics

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: China National Funds for Distinguished Young Scientists, Basic and Applied Basic Research Foundation of Guangdong Province

Awards: G962364608, G982540708

OpenAlex ID: W4409082176

FWCI: 4.162

Cites: 32

Cited by: 26

Related to: 10