Work

Improving the memory window of a ferroelectric thin film transistor using an atomic layer deposited HfN x interfacial layer

Year: 2025

Type: article

Abstract: This work examines the impact of atomic-layer-deposited 1-nm-thick HfN x interfacial layer and NH 3 annealing on the ferroelectric properties of Hf 0.5 Zr 0.5 O 2 capacitors and ferroelectric thin-film transistors with an amorphous InGaZnO channel.

Source: Journal of Materials Chemistry C

DOI: 10.1039/d5tc00453e

Authors: Hyun Woo Nam, Jae Hoon Lee, Seung Kyu Ryoo, Seong Jae Shin, Kun Hee Ye, Kyung Do Kim, Seung yong Byun, In Soo Lee, Suk Hyun Lee, Jae Hee Song, Jung hae Choi, Cheol Seong Hwang

Institutions: Seoul National University, SK Hynix (South Korea), Korea Institute of Science and Technology

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Funders: National Research Foundation, National Research Foundation of Korea

Awards: G6661820739, G7208142174

OpenAlex ID: W4409082710

FWCI: 1.586

Cites: 60

Cited by: 7

Related to: 10