Optimization of the Electrical Properties of Sn-Doped Indium Tin Oxide Films on Three-Dimensionally Structured Surfaces
Year: 2025
Type: article
Abstract: We studied the effect of excessive Sn doping on the physical properties of indium tin oxide (ITO) films prepared on flat and three-dimensional (3D) glass substrates.Bilayers of pure Sn and ITO containing In 2 O 3 and SnO 2 in a weight ratio of 90:10 (10 wt.%) were prepared using radiofrequency sputtering under base pressures of 0.5 × 10 -6 to 3.0 × 10 -6 Torr.The Sn doping of ITO was performed via in-situ post-annealing at 400 ∘ C for 30 min.The sheet resistances (R □ ) of Sn-doped ITO films were one-tenth of those of undoped samples.The Sn doping of ITO conducted at a base pressure below 0.6 × 10 -6 Torr in a sputter chamber was crucial for obtaining a low sheet resistance of less than 6.0 Ω/□.The best result was R □ = 4.9 Ω observed for the Sn (2.0 nm)/ITO (400 nm) sample grown on the 3D substrate.This sample maintained a high light transmittance of 81 % for λ = 380 -780 nm.
Author: Jeha Kim
Institution: Cheongju University
Language: English
Topic: ZnO doping and properties
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W4409100401