Au/Germanium1 − xBismuthx Schottky Diode for Self‐Driven, High Detectivity, and High Responsivity Near‐Infrared Broadband Photodetectors
Year: 2025
Type: article
Abstract: Metal‐semiconductor Schottky diode structures play a crucial role in the development of optoelectronic devices. In recent years, Schottky photodiode‐based photodetectors utilizing molybdenum disulfide (MoS2) have garnered significant attention and are among the most extensively researched options. However, MoS2 has a notable limitation: its low light absorption in the near‐infrared (NIR) spectrum results in reduced responsivity compared to the visible spectrum. To address this issue and achieve high responsivity, high detectivity, and a broad spectral response for NIR photodetectors, a GeBi‐based Au/Ge1 − xBix Schottky diode photodetector for the first time is proposed. By varying the doping concentration of Bi (x) and subsequently regulating the light absorption of the Ge1 − xBix films in the NIR band, the Ge0.874Bi0.126 photodetector is identified and fabricated with an optimal Bi doping concentration of 12.6%. Testing revealed that within the 800–1200 nm wavelength range, the photodetector exhibits a responsivity range of 2.47 –519.7 AW−1 and a detectivity range of 3.56 × 1011 Jones to 1.6 × 1013 Jones. In contrast to most Schottky diode‐based NIR photodetectors, which typically respond to a narrow optical spectrum, the results demonstrate that the photodetector maintains high responsivity and detectivity across the entire 800 to 1200 nm range.
Source: Advanced Optical Materials
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
Awards: G5028830918, G6056384052, G7866455056
OpenAlex ID: W4409108866