Expression of concern: A hysteresis-free perovskite transistor with exceptional stability through molecular cross-linking and amine-based surface passivation
Year: 2025
Type: article
Abstract: Expression of concern for ‘A hysteresis-free perovskite transistor with exceptional stability through molecular cross-linking and amine-based surface passivation’ by Hyeong Pil Kim et al. , Nanoscale , 2020, 12 , 7641–7650, https://doi.org/10.1039/C9NR10745B.
Source: Nanoscale
DOI: 10.1039/d5nr90064f
Institutions: Kyung Hee University, National Centre of Scientific Research "Demokritos", Institute of Nanoscience and Nanotechnology, University of Exeter, Universidade Tecnológica Federal do Paraná, National University of Malaysia, Chinese Academy of Sciences, Fujian Institute of Research on the Structure of Matter, Swansea University, École Polytechnique Fédérale de Lausanne
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W4409109043