Work

A Multi-Condition-Based Junction Temperature Estimation Technology for Double-Sided Cooled Insulated-Gate Bipolar Transistor Modules

Year: 2025

Type: article

Abstract: A method considering thermal boundary conditions and thermal coupling effects is proposed to estimate the junction temperature of double-sided cooling insulated-gate bipolar transistor (IGBT) modules. Traditional methods, which rely on negative temperature coefficient (NTC) measurements, often overlook mutual thermal interactions among chips, leading to inaccuracies under varying cooling boundary conditions. In this paper, a Foster thermal network model incorporating chip thermal coupling is developed to estimate the junction temperature of double-sided cooling IGBT power modules. The thermal model parameters are extracted through a combination of finite element simulation and experimental analysis. The effects of different cooling boundary conditions on the thermal model and the module’s heat channeling behavior are examined, and compensation strategies for various cooling boundaries are proposed. Experimental and simulation results indicate that the estimated junction temperature error of the proposed method remains within 5 °C under different operating conditions.

Source: Energies

DOI: 10.3390/en18071785

Authors: Mengfan Chen, Guangyin Lei, Min Li, Shouzhong Chang, Sirui Wu, Huichuang Bao

Institution: Fudan University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: gold

Estimated APC paid: $3,137