Work

Transport properties of graphene/MoS2 heterostructure device in the low carrier density regime at cryogenic temperatures

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0253946

Authors: Muhammad Atif Khan, Hanul Kim, Hye Jung Kim, Aram Yoon, Zonghoon Lee, Christopher J. B. Ford, Gil-Ho Kim

Institutions: Sungkyunkwan University, Pusan National University, Institute for Basic Science, Ulsan National Institute of Science and Technology, University of Cambridge

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: National Research Foundation of Korea

Awards: G1760515783, G3788871460, G852346845

OpenAlex ID: W4409110320

FWCI: 0.636

Cites: 22

Cited by: 3

Related to: 10