Work

Self-Powered Photodetector with High Photocurrent and Polarization Sensitivity Based on the GaN/CdO Heterostructure

Year: 2025

Type: article

Abstract: Two-dimensional (2D) van der Waals (vdW) heterostructure offers new possibilities for enhancing the photocurrent (Iph) of self-powered photodetectors through the photogalvanic effect (PGE). In our research, the electronic, electrical, and photocatalytic properties of the GaN/CdO heterostructure are analyzed using first-principles, as well as the I-V curve and Iph are calculated based on quantum transport simulations. The direct bandgap of S-type GaN/CdO heterostructure is 1.96 eV, with the built-in electric field. The heterostructure exhibits a high solar to hydrogen efficiency (ηSTH) of 32.28%, which can be enhanced by applying biaxial strains. The carrier mobilities (μ) of the heterostructure exhibit anisotropy, with high electron mobility along the zigzag direction. The photodetectors based on the GaN/CdO heterostructure exhibit high Iph with large extinction ratio (ER). The photocurrent is increase by bending the photodetector at the central angle (φ) of 15 degrees. Our research demonstrates the potential application of the GaN/CdO heterostructure in the fields of photocatalytic water splitting and photodetector.

Source: The Journal of Physical Chemistry C

DOI: 10.1021/acs.jpcc.5c00597