Work

Post Work-Function Metal Annealing Induced Significant Reliability Improvement for DDDPMOS With Dual SiO₂ Layers and Metal Gate

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3554133

Authors: Cheng-Hao Liang, Hang Li, Ran Bi, Han-Wen Ding, Yu-Long Jiang

Institutions: Fudan University, State Key Laboratory of ASIC and System

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G6194195854

OpenAlex ID: W4409129642

FWCI:

Cites: 26

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Related to: 10