Work

Advancements and challenges in III‐Nitride Semiconductor‐Based Power Rectifiers

Year: 2025

Type: article

Source: physica status solidi (a)

DOI: 10.1002/pssa.202500047

Authors: Shaik Yezazul Nishath, Kuldip Singh, Suchandan Pal

Institutions: Central Electronics Engineering Research Institute, Academy of Scientific and Innovative Research

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

OpenAlex ID: W4409132378

FWCI: 1.256

Cites: 110

Cited by: 4

Related to: 10