Work

2D In2Ge2Te6 Crystals for High-Performance p-Channel Transistors

Year: 2025

Type: article

Source: Nano Letters

DOI: 10.1021/acs.nanolett.5c00580

Authors: Tong Zhao, Shiying Guo, Xiufeng Song, Jie Gao, Kaili Wang, Xudong Pei, Yujie Yan, Seungwoo Son, Jiamin Lin, Haonan Nie, Biao Xu, Zhesheng Chen, Luca Perfetti, Weigao Xu, Yi Zhang, Shengli Zhang, Zonghoon Lee, Peng Wang, Xiang Chen, Haibo Zeng

Institutions: Nanjing University of Science and Technology, Ministry of Industry and Information Technology, Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Institute for Basic Science, Ulsan National Institute of Science and Technology, Centre National de la Recherche Scientifique, École Polytechnique, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Laboratoire des Solides Irradiés, Institut Polytechnique de Paris, University of Warwick

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Jiangsu Province, National Key Research and Development Program of China

Awards: G1246188717, G1259496702, G1779867480, G1818823871, G4435036951, G5455086680, G5503191593, G7533144764, G816363955, G826558667

OpenAlex ID: W4409135000

FWCI: 1.654

Cites: 32

Cited by: 8

Related to: 10