Work

The impact of interface traps on the subthreshold characteristics of III–V vertical nanowire tunnel field-effect transistors

Year: 2025

Type: article

Abstract: In this work, in an effort to study tunneling physics, we have performed extensive electrical characterization of two generations of top-down III–V vertical nanowire tunnel field-effect transistors (TFETs). The widely different MOS interface trap densities of two generations of TFETs and the availability of metal–oxide–semiconductor field-effect transistors fabricated simultaneously enable direct study of various effects of interface states on TFETs. Interface trap-assisted tunneling was suppressed in the second generation TFETs, and the residual temperature dependence of the second generation TFETs can be explained by a band-edge sharpness of 120 mV/dec.

Source: Journal of Applied Physics

DOI: 10.1063/5.0250158

Authors: Chengdong Chang, Yanjie Shao, Yi Zhang, Qianwu Zhang, Lin-Sheng Wu, Xin Zhao

Institutions: Shanghai Jiao Tong University, Massachusetts Institute of Technology

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $3,500

Funder: National Natural Science Foundation of China