Work

Comparing Short and Long-term Reliability of HfO 2 and Al: HfO 2 RRAM Devices

Year: 2024

Type: conference-paper

Source: IEEE International Integrated Reliability Workshop final report

DOI: 10.1109/iirw62856.2024.10947134

Authors: A. Baroni, E. Pérez, K. Dorai Swamy Reddy, S. Pechmann, C. Wenger, D. Ielmini, C. Zambelli

Institutions: Leibniz Institute for High Performance Microelectronics, Brandenburg University of Technology Cottbus-Senftenberg, Technical University of Munich, Politecnico di Milano, University of Ferrara

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Education, Deutsche Forschungsgemeinschaft, European Research Council

OpenAlex ID: W4409156640

FWCI: 3.906

Cites: 18

Cited by: 5

Related to: 10