Work

FEOL Reliability Assessment of 2 nm Gate-All-Around Nanosheet Transistors with both Isolated and non-Isolated Substrates

Year: 2024

Type: conference-paper

Source: IEEE International Integrated Reliability Workshop final report

DOI: 10.1109/iirw62856.2024.10947160

Authors: Kenji Okada, Miaomiao Wang, Yasuhiro Isobe, Huimei Zhou, Ernest Wu, Noboru Takeuchi, Hiroshi Miki, Yuncheng Song, Yang Liu, Niki Fokas, Kei Date, Craig Child

Institution: IBM (United States)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4409156643

FWCI: 0.806

Cites: 9

Cited by: 1

Related to: 10