Work

Physical Mechanism of Frequency Dependent TDDB Lifetime through Various Devices in DRAM

Year: 2024

Type: conference-paper

Source: IEEE International Integrated Reliability Workshop final report

DOI: 10.1109/iirw62856.2024.10947157

Authors: Inhoe Kim, Donghee Son, Sunghwan Kim, Jaewon Kim, Gang-Jun Kim, Seonhaeng Lee, Namhyun Lee, Seungbum Ko, Sangwoo Pae

Institutions: Samsung (South Korea), Samsung Electronics (South Korea)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4409156809

FWCI: 2.418

Cites: 3

Cited by: 3

Related to: 10