Atomic layer deposited Ta2O5: From process optimization to thin film characterization
Year: 2025
Type: article
Abstract: Tantalum pentoxide (Ta2O5) thin films were grown by atomic layer deposition (ALD) using pentakis(dimethylamino)tantalum (PDMAT) and H2O at temperatures between 150 and 300 °C. A peak growth rate of 0.68 Å/cycle was achieved at 200 °C. The as-deposited films from the optimal process are oxygen rich with an oxygen-to-tantalum (O/Ta) ratio of 3.3. Various thin film characterization methods were undertaken, and they showed that the as-deposited Ta2O5 films are amorphous and have a large optical bandgap of 4.1 eV. They possess a high breakdown strength of 3.9 MV cm−1, a high electrical resistivity of 1 × 1013 Ω cm, and a respectable dielectric constant of 14, indicating its suitability as high k dielectric materials in optical and electronic devices. Moreover, a phase transition to polycrystalline β-Ta2O5 occurs after annealing at 700 °C, and it is stable up to 1000 °C.
Source: AIP Advances
DOI: 10.1063/6.0004254
Authors: Xiao Chen, Kham M. Niang, Babak Bakhit, Yuri Jeon, Judith Driscoll, Andrew Flewitt
Institutions: University of Cambridge, Linköping University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,350
Awards: Innovative Material, Processes and Devices for Low Power Flexible Electronics: Creating a Sustainable Internet of Everything, G2458539902, G2883880675, Advanced oxide thin films: an innovative design for memory applications, G6907737189, G7144080991, G8612209933, The Accelerator-based Ion Technology Center
OpenAlex ID: W4409164244