Impact of epitaxial structural parameters on two-dimensional hole gas properties in p-GaN/AlGaN/GaN heterostructures
Year: 2025
Type: article
Source: Chinese Physics B
Authors: Fuzhou 福洲 Wen 文, Qianshu 千树 Wu 吴, Jinwei 津玮 Zhang 张, Zhuoran 卓然 Luo 罗, Senyuan 森源 Xu 许, Hao 灏 Jiang 江, Yang 扬 Liu 刘
Institution: Sun Yat-sen University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4409212633