Work

Effect of quality improvement in active region on temperature characteristics of GaN-based ultraviolet laser diode

Year: 2025

Type: article

Source: Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

DOI: 10.1116/6.0004363

Authors: Yujie Huang, Jing Yang, Degang Zhao, Zongshun Liu, Feng Liang, Ping Chen

Institutions: Chinese Academy of Sciences, Institute of Semiconductors, University of Chinese Academy of Sciences

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Beijing Nova Program

Awards: G228790195, G2407921691, G2448729015, G6030225121, G6949709843, G8056408038, G8379556552

OpenAlex ID: W4409215459

FWCI:

Cites: 19

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Related to: 10