Work

Interfacial second harmonic generation switching with multilayer InSe/VO2 heterostructure in telecom band

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0260593

Authors: Yuanyuan Li, Yu Sun, Liang Li, Jinhao Huang, Letian Yin, Liangxin Qiao, Jianhua Chang, Zeming Qi, Qiannan Cui, Chongwen Zou

Institutions: Nanjing University of Information Science and Technology, University of Science and Technology of China, National Synchrotron Radiation Laboratory, Southeast University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G1865597369, G1964761330, G1992386428, G4007849491, G5772178934, G6212276215, G6690784701

OpenAlex ID: W4409217398

FWCI: 0.207

Cites: 23

Cited by: 1

Related to: 10