Work

Ultra-Long Disturb-Free Read Operation With Low Resistance Drift in Phase Change Memory

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3555276

Authors: Ruoqin Wang, Jia Zheng, Ruobing Wang, Chenchen Xie, Li Xie, Xi Li, Zhitang Song, Xilin Zhou

Institutions: University of Science and Technology of China, Chinese Academy of Sciences, Shanghai Institute of Microsystem and Information Technology

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, China Postdoctoral Science Foundation, Shanghai Rising-Star Program, National Key Research and Development Program of China

Awards: G2244963890, G2445913857, G405280213, G4593560377, G4793976000, G5045032373, G842996048, G8745428852

OpenAlex ID: W4409228460

FWCI: 0.225

Cites: 41

Cited by: 1

Related to: 10