Work

Interfacial defect engineering to boost deep-ultraviolet photodetection based on a wide-bandgap semiconductor heterostructure

Year: 2025

Type: article

Source: Inorganic Chemistry Frontiers

DOI: 10.1039/d5qi00691k

Authors: Han Wu, Lincong Shu, Sihan Yan, Shulin Sha, Qinghua Zhang, Zeng Liu, Shan Li, Weihua Tang, Yuehui Wang, Jiaying Shen, Zhenping Wu, Kun Lin, Qiang Li, Jun Miao, Xianran Xing

Institutions: University of Science and Technology Beijing, Nanjing University of Posts and Telecommunications, Nanjing University of Aeronautics and Astronautics, Chinese Academy of Sciences, Institute of Physics, Inner Mongolia University, Peking University, Beijing University of Posts and Telecommunications, State Key Laboratory of Information Photonics and Optical Communications

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G411719430, G5274196416, G5985451879, G7188609895

OpenAlex ID: W4409240422

FWCI: 0.16

Cites: 44

Cited by: 1

Related to: 10