Effect of 1 MeV neutron-irradiation on the electrical properties of Si-based diodes
Year: 2025
Type: article
Abstract: This study investigates the impact of 1 MeV neutron irradiation on the electrical properties of n-type silicon (n-Si) Schottky diodes, focusing on high fluences of 1015 and 1016 n/cm2. Current-voltage (I-V) measurements were conducted on diodes before and after irradiation to assess changes in conduction behaviour. Results reveal a significant shift from exponential diode characteristics to ohmic conduction with increasing fluence, a phenomenon less explored compared to lower-fluence studies (e.g., <1014 n/cm2) documented by the RD50 collaboration and CERN experiments. The reverse current increased by factors of 3.5 and 82 at 1015 and 1016 n/cm2, respectively, attributed to radiation-induced defects generating minority carriers. In the forward bias, minimal change was observed at 1015 n/cm2 (factor of 1.14 decrease), while a marked increase (factor of 3.64) occurred at 1016 n/cm2, linked to enhanced majority carrier generation by defects. This transition to ohmic behaviour, corroborated by a reduction in rectification ratio from 45 (unirradiated) to 2 (1016 n/cm2), reflects defect levels pinning the Fermi energy near the intrinsic position. These findings elucidate the effects of high-fluence neutron irradiation on silicon diodes, offering valuable insights for developing radiation-hard detectors for extreme environments, such as the High-Luminosity LHC.
Source: Journal of Instrumentation
Institution: University of South Africa
Language: English
Subfield: Nuclear and High Energy Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,290
OpenAlex ID: W4409246330