Work

Analysis of air-bridge thermophotovoltaic devices and systems

Year: 2025

Type: article

Abstract: We present a model of air-bridge InGaAs and Si thermophotovoltaic (TPV) systems that guides the optimization of both output power density and efficiency, considering key design factors such as series resistance ( R s ), shunt resistance , out-of-band reflectance, and dissipated power. Assuming lossless emitter-to-cell coupling, an InGaAs TPV cell can reach an efficiency of 43.2 % and output power density ( P out ) = 1.6 W/cm 2 at an emitter temperature of T h = 1060 °C. At T h = 1500 °C, P out can exceed 9 W/cm 2 , although ohmic losses may reduce the efficiency to below 35 %. In contrast, Si air-bridge TPVs exhibit relatively high parasitic power losses due to free carrier absorption (FCA), limiting the efficiency to 30.1 % at T h = 1400 °C. By suppressing FCA, this efficiency can be improved to 40 %. However, the high R s of Si TPV cells restricts P out to <2 W/cm 2 , suggesting that Si-based TPV systems may not be suitable for high-power applications. While this model has been used for InGaAs and Si TPVs, its versatility allows for optimizing the performance of TPV systems with other semiconductor materials and device structures.

Source: Energy

DOI: 10.1016/j.energy.2025.136068

Authors: Jihun Lim, Stephen R. Forrest

Institutions: University of Michigan, Jeonbuk National University

Language: English

Topic: Thermal Radiation and Cooling Technologies

Subfield: Civil and Structural Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: hybrid

Estimated APC paid: $4,260