Work

Effect of 1-MeV Equivalent Neutron Irradiation on the Electrical Characteristic of NiOx/β-Ga2O3 p-n Diode

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3554746

Authors: Yahui Feng, Hongxia Guo, Wuying Ma, Xiaoping Ouyang, Jinxin Zhang, Fengqi Zhang, Dinghe Liu, Xiaohua Ma, Yue Hao

Institutions: Xidian University, Xiangtan University, Northwest Institute of Nuclear Technology

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G31660630, G4396751572

OpenAlex ID: W4409262520

FWCI: 0.48

Cites: 37

Cited by: 3

Related to: 10