Year: 2025
Type: article
Abstract: Magnetron sputtering allows for the accurate estimation of film thickness. Strontium titanate (STO) thin films were deposited on Nb-doped STO substrates using radiofrequency magnetron sputtering technology. The microstructures and dielectric properties of STO thin films were investigated. X-ray diffraction (XRD) analysis indicates that uniform polycrystalline STO films were obtained after thermal annealing at 650 °C. The films exhibit a significant correlation between thickness, annealing temperature, and breakdown field strength. The optimal film with a thickness of 1150 nm achieves a capacitance density of 1688 pF/mm2 and a breakdown field strength of 270 kV/mm. Additionally, STO films annealed at 650 °C maintained their capacitance value within ±15% across a temperature range of −55 °C to 125 °C. These results highlight the potential of STO thin films for high-performance capacitor applications.
Source: Materials
DOI: 10.3390/ma18081687
Authors: Yilong Feng, Zhenya Lu, Ming Lv
Institution: South China University of Technology
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,137
OpenAlex ID: W4409270546