Work

Growth regimes of (0001) AlN by ammonia molecular beam epitaxy

Year: 2025

Type: article

Source: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI: 10.1116/6.0004399

Authors: Ashley E. Wissel-Garcia, Feng Wu, James S. Speck

Institution: University of California, Santa Barbara

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Air Force Office of Scientific Research, Army Research Office

Awards: G3877407599, G685413141

OpenAlex ID: W4409293382

FWCI: 1.292

Cites: 49

Cited by: 4

Related to: 10