Year: 2025
Type: article
Abstract: High Resolution Image Download MS PowerPoint Slide Monolayer tungsten disulfide (WS 2 ) is a direct-band-gap semiconductor that has excellent luminescence properties, which are of great interest for optoelectronic applications. In this study, we investigated the effect of gallium (Ga) on WS 2 monolayers grown by chemical vapor deposition. Our results indicate that Ga-doped WS 2 exhibits a 3.6-fold increase in photoluminescence intensity for doped samples compared to pristine WS 2 . To confirm the existence of Ga in the WS 2 structures, resonance Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were utilized as characterization methods. A redshift of the XPS spectrum was observed as well as an increase in the disorder-related Raman modes, which were attributed to the influence of Ga. XPS analysis and ab initio electronic structure calculations reveal the presence of substitutional Ga atoms as well as Ga atoms adsorbed on WS 2 surfaces.
Source: ACS Omega
Authors: Shuai Zhang, Andre N. Barbosa, Munique Eva Paiva de Araujo Monteiro de Barros, Alexandre Mello, Kevin Lizárraga, Pedro Paulo de Mello Venezuela, Fernando Lázaro Freire
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,935
OpenAlex ID: W4409298940