Temperature Dependent Dark Conductivity: Insights into Defect Levels in ln2S3 and Graphene-doped ln2S3 Thin Films
Year: 2025
Type: conference-paper
Abstract: Indium sulphide is a promising candidate for optoelectronic and solar cell applications. This study employs a cost-effective, indigenously developed setup to analyse defect levels in In2S3 and graphene-doped In2S3 thin films, which are key determinants of their electronic properties. In2S3 was deposited using Chemical Bath Deposition (CBD), and graphene was incorporated into the thin films through a two-step process involving spin coating followed by annealing. Shallow defect levels at 33 meV, associated with indium interstitials, were detected, which contribute to the n-type behaviour of In2S3. Defect levels in the range of 12-25 meV were similar to those in chlorine-doped In2S3, while a deeper defect level at 52.75 meV, which is absent in pristine In2S3, plays a key role in the superior properties of the graphene-doped In2S3 films, suggesting its potential for advanced optoelectronic applications.
Authors: N J Raysa, C J Augustine Sumesh, K S Priyanka Laslet, T H Sajeesh
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W4409299563