Work

The Achievement of Pulse Laser Deposited Amorphous P-Type N-Doped Ga₂O₃ for Applying in Thin Film Transistor and Homojunction Diode

Year: 2025

Type: article

Source: IEEE Transactions on Device and Materials Reliability

DOI: 10.1109/tdmr.2025.3559225

Authors: Teng-Min Fan, Chen Wang, Cong Yi, Chen-Hao Zhou, Yu-Li Su, Yun-Shao Cho, Dong-Sing Wuu, Shui-Yang Lien

Institutions: Xiamen University of Technology, Dayeh University, National Chi Nan University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Fujian Province, Science and Technology Department of Tibet, Hunan Association for Science and Technology

Awards: 紫外透明导电氧化镓薄膜性能及其掺杂调控机理研究, G5430555038, G8410263275, G8679223621, G8839019984

OpenAlex ID: W4409310752

FWCI: 1.296

Cites: 62

Cited by: 8

Related to: 10